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參數(shù)資料
| 型號： | APT60DQ60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快軟恢復(fù)整流二極管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 139K |
| 代理商： | APT60DQ60S |
APT60DQ60B_S(G)
0
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = di
M
/dt
6
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
APT60GT60BR
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO
-
247 Package Outline
D
3
PAK Package Outline
15.85 (.624)
18.70 (.736)
1.15 (.045)
5.45 (.215) BSC
4.90 (.193)
1.45 (.057)
2.70 (.106)
0.40 (.016)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Cathode)
2.40 (.094)
C
(
1.90 (.075)
Cathode
Anode
1.20 (.047)
12.40 (.488)
13.30 (.524)
1.00 (.039)
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
10.90 (.430) BSC
3.50 (.138)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Dimensions in Millimeters and (Inches)
C
Anode
Cathode
e3
e1 SAC: Tin, Silver, Copper
100% Sn
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60DQ60SG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT60DS04HJ | 制造商:Microsemi Corporation 功能描述:MOD DIODE 400V SOT-227 |
| APT60DS10HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60DS20HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60GA60JD60 | 功能描述:IGBT 600V 112A 356W SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 8™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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