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參數(shù)資料
| 型號： | APT60GT60JRDQ3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 462K |
| 代理商： | APT60GT60JRDQ3 |
0
APT60GT60JRDQ3
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 330μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700μA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 60A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 60A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
μA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT60GT60JRDQ3
600
±30
105
48
360
360A @ 600V
379
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
2.0
2.5
2.8
330
2500
±100
C
E
G
APT60GT60JRDQ3
SOT-227
ISOTOP
file # E145592
"UL Recognized"
G
E
E
C
The Thunderblot
IGBT
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot
IGBT
offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 100KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
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