參數(shù)資料
型號： APT60GF120JRDQ3
廠商： Advanced Power Technology Ltd.
英文描述： FAST IGBT & FRED
中文描述： 快速IGBT
文件頁數(shù)： 1/9頁
文件大?。?/td> 456K
代理商： APT60GF120JRDQ3
0
APT60GF120JRDQ3
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 350μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 500μA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
mA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
APT60GF120JRDQ3
1200
±30
149
79
300
300A @ 1200V
625
-55 to 150
UNIT
Volts
Amps
Watts
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
APT Website - http://www.advancedpower.com
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.5
3.0
3.1
0.35
3.0
±100
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
RBSOA and SCSOA Rated
Ultra Low Leakage Current
Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
SOT-227
ISOTOP
file # E145592
"UL Recognized"
G
E
E
C
C
E
G
APT60GF120JRDQ3
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