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參數(shù)資料
| 型號： | APT60GT60JRDQ3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 462K |
| 代理商： | APT60GT60JRDQ3 |
0
APT60GT60JRDQ3
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
400V
R
=
4.3
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
E
O
,
t
f
F
t
d
(
,
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
V
CE
= 400V
T
J
= 25°C
,
or 125°C
R
= 4.3
L = 100μH
0
20
25
20
15
10
5
0
100
80
60
40
20
0
7000
6000
5000
4000
3000
2000
1000
0
12000
10000
8000
6000
4000
2000
0
V
GE
= 15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125°C
T
J
=
25°C
40
60
80
100
120
140
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
350
300
250
200
150
100
50
0
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
7000
6000
5000
4000
3000
2000
1000
0
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
off,
120A
E
on2,
120A
E
off,
60A
E
on2,
60A
E
off,
30A
E
on2,
30A
E
off,
120A
E
on2,
120A
E
off,
60A
E
on2,
60A
E
off,
30A
E
on2,
30A
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