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參數(shù)資料
| 型號(hào)： | APT60GT60JRDQ3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹靂 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 462K |
| 代理商： | APT60GT60JRDQ3 |
0
APT60GT60JRDQ3
TYPICAL PERFORMANCE CURVES
5,000
400
350
300
250
200
150
100
50
0
C
P
F
I
C
,
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
V
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
C
oes
C
res
C
ies
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
J
,
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
50
60
70
80 90
F
M
,
I
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
120
50
10
5
1
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θ
JC
f
max2
=
P
diss
=
T
J
= 125
°
C
T
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 4.3
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
D = 0.9
1,000
500
100
0.136
0.151
0.0434
0.0078
0.285
4.38
Dissipated Power
(Watts)
T
J
(°C)
T
C
(°C)
Z
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
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