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參數(shù)資料
| 型號(hào)： | APTM100DDA35T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.35 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 319K |
| 代理商： | APTM100DDA35T3 |
APTM100DDA35T3
A
P
T
M
100D
D
A
35T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
1000
V
VGS = 0V,VDS = 1000V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 11A
350
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5.2
Coss
Output Capacitance
0.88
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.16
nF
Qg
Total gate Charge
186
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A
122
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
12
Td(off)
Turn-off Delay Time
155
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5
40
ns
Eon
Turn-on Switching Energy
900
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
623
J
Eon
Turn-on Switching Energy
1423
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5
779
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
30
A
IF = 30A
1.9
2.3
IF = 60A
2.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.7
V
Tj = 25°C
290
trr
Reverse Recovery Time
Tj = 125°C
390
ns
Tj = 25°C
670
Qrr
Reverse Recovery Charge
IF = 30A
VR = 667V
di/dt=200A/s
Tj = 125°C
2350
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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