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參數(shù)資料
| 型號： | ARF466B |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 167K |
| 代理商： | ARF466B |
DYNAMIC CHARACTERISTICS
ARF466A_B
30
45
60
75
90
105
120
FREQUENCY(MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD = 150V
P
out = 150W
30
25
20
15
10
5
0
GAIN
(dB)
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS = 0V
V
DS = 150V
f = 1 MHz
V
GS = 15V
V
DD = 500 V
I
D = 13A @ 25°C
R
G = 1.6
MIN
TYP
MAX
2000
165
75
TBD
UNIT
pF
ns
FUNCTIONALCHARACTERISTICS
Symbol
G
PS
η
ψ
Test Conditions
f = 40.68 MHz
V
GS = 2.5V
V
DD = 150V
Pout = 300W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
14
16
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
1000
20
18
16
14
12
10
8
6
4
2
0
1
234
5
6
7
8
CAPACITANCE
(pf)
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10,000
1000
500
100
50
10
.1
1
10
100 200
I D
,DRAIN
CURRENT
(AMPERES)
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 4, Typical Maximum Safe Operating Area
VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)
Figure 3, Typical Transfer Characteristics
I D
,DRAIN
CURRENT
(AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
Ciss
Coss
Crss
52
10
5
1
.5
.1
1mS
10mS
100mS
100uS
050-4925
Rev
B
2-2005
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PDF描述 |
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| ARF466B | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| ARF466A | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-264AA |
| ARF473 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARF476FL | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF466BG | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N CH 1000V 13A TO264 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET |
| ARF466FL | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF PWR MOSFET 1000V 13A DIE |
| ARF466FL_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE |
| ARF467FL | 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk |
| ARF468AG | 功能描述:RF Mosfet N-Channel 150V 40.68MHz 15dB 300W TO-264 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):有效 晶體管類型:N 通道 頻率:40.68MHz 增益:15dB 電壓 - 測試:150V 額定電流:22A 噪聲系數(shù):- 電流 - 測試:- 功率 - 輸出:300W 電壓 - 額定:500V 封裝/外殼:TO-264-3，TO-264AA 供應(yīng)商器件封裝:TO-264 標(biāo)準(zhǔn)包裝:1 |
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