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參數(shù)資料
| 型號： | ARF477FL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 145K |
| 代理商： | ARF477FL |
050-4952
B
3-2010
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
165V
400W
100MHz
The ARF477FL is a matched pair of RF power transistors in a common source conguration. It is designed for high
voltage push-pull or parallel operation in narrow band ISM and MRI power ampliers up to 100 MHz.
Specied 150 Volt, 65 MHz Characteristics:
Output Power = 400 Watts
Gain = 15dB (Class AB)
Efciency = 50% min
High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
RoHS Compliant
ARF477FL
Common Source
Push-Pull Pair
G
D
S
D
Microsemi Website - http://www.microsemi.com
ARF477FL
Symbol
Parameter
Ratings
Unit
V
DSS
Drain-Source Voltage
500
V
DGO
Drain-Gate Voltage
500
I
D
Continuous Drain Current @ T
C = 25°C (each device)
15
A
V
GS
Gate-Source Voltage
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
750
W
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 175
°C
T
L
Lead Temperature: 0.063” from Case for 10 Sec.
300
Static Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
BV
DSS
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
500
V
DS(ON)
On State Drain Voltage 1 (I
D(ON) = 7.5A, VGS = 10V)
2.9
4
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
25
μA
Zero Gate Voltage Drain Current (V
DS = 50VDSS, VGS = 0, TC = 125°C)
250
I
GSS
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
±100
nA
g
fs
Forward Transconductance (V
DS = 15V, ID = 7.5A)
3.5
5.6
8
mhos
g
fs1/gfa2
Forward Transconductance Match Ratio (V
DS = 15V, ID = 5A)
0.9
1.1
V
GS(TH)
Gate Threshold Voltage (V
DS = VGS, ID = 50mA)
35
V
GS(TH)
Gate Threshold Voltage Match (V
DS = VGS, ID = 50mA)
0.2
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Symbol
Parameter
Min
Typ
Max
Unit
R
θJC
Junction to Case
0.18
0.2
°C/W
R
θJHS
Junction to Sink (High Efciency Thermal Joint Compound and Planar Heat Sink Surface.)
0.30
0.32
Thermal Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ARF477FL_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR |
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| ARF500 16R J | 功能描述:RES CHAS MNT 16 OHM 5% 500W 制造商:ohmite 系列:ARF 包裝:散裝 零件狀態(tài):在售 電阻值:16 Ohms 容差:±5% 功率（W）:500W 成分:繞線 溫度系數(shù):±150ppm/°C 工作溫度:0°C ~ 200°C 特性:脈沖耐受 涂層，外殼類型:鋁 安裝特性:螺釘孔 大小/尺寸:10.630" 長 x 3.110" 寬 (270.00mm x 79.00mm) 高度 - 安裝（最大值）:0.728"（18.50mm） 引線形式:導(dǎo)線引線 封裝/外殼:矩形外殼 故障率:- 標準包裝:1 |
| ARF500 68R J | 功能描述:RES CHAS MNT 68 OHM 5% 500W 制造商:ohmite 系列:ARF 包裝:散裝 零件狀態(tài):在售 電阻值:68 Ohms 容差:±5% 功率（W）:500W 成分:繞線 溫度系數(shù):±150ppm/°C 工作溫度:0°C ~ 200°C 特性:脈沖耐受 涂層，外殼類型:鋁 安裝特性:螺釘孔 大小/尺寸:10.630" 長 x 3.110" 寬 (270.00mm x 79.00mm) 高度 - 安裝（最大值）:0.728"（18.50mm） 引線形式:導(dǎo)線引線 封裝/外殼:矩形外殼 故障率:- 標準包裝:1 |
| AR-F5000 | 制造商:Stellar Labs Power 功能描述:Acer Ferrari Replacement Laptop Battery |
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