參數(shù)資料
型號： ARF476FL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： 功率晶體管
英文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 183K
代理商： ARF476FL
050-4931
B
6-2007
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (each device)
Symbol
BV
DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
g
fs1
/
g
fs2
V
GS(TH)
V
GS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Voltage 1 (I
D(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 15V, I
D
= 5A)
Forward Transconductance Match Ratio (V
DS
= 15V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
Gate Threshold Voltage Match (V
DS
= V
GS
, I
D
= 200mA)
MIN
TYP
MAX
500
2.9
4
100
500
±100
3
3.6
0.9
1.1
2
3.3
4
0.2
UNIT
Volts
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
(each device)
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF476FL
500
10
±30
910
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
165V
450W 150MHz
The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
Specified 150 Volt, 128 MHz Characteristics:
Output Power = 900 Watts Peak
Gain = 15dB (Class AB)
Efficiency = 50% min
Extended Flange - 3mm Creep Distance.
High Voltage Breakdown and Large SOA
for Superior Ruggedness.
Low Thermal Resistance.
ARF476FL
Common Source
Push-Pull Pair
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJHS
Characteristic
Junction to Case
Junction to Sink (Use High Efficiency Thermal Grease and Planar Heat Sink Surface.)
MIN
TYP
MAX
0.15
0.165
0.30
0.33
UNIT
°C/W
G
D
S
D
Microsemi Website - http://www.microsemi.com
ARF476FL
D
GG
S
相關(guān)PDF資料
PDF描述
ARF477FL 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
ARF523-2112S DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
ARH1617RGS DATACOM TRANSFORMER FOR 10/100 BASE-T; ETHERNET APPLICATION(S)
ARHNR-1605GS DATACOM TRANSFORMER FOR 10/100 BASE-T; ETHERNET APPLICATION(S)
ARHNR-1609GS DATACOM TRANSFORMER FOR 10/100 BASE-T; ETHERNET APPLICATION(S)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ARF476FL_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF477FL 制造商:Microsemi Corporation 功能描述:Trans RF MOSFET N-CH 500V 15A 8-Pin 制造商:Microsemi Corporation 功能描述:RF MOSFET (VDMOS) - Bulk 制造商:Microsemi Corporation 功能描述:RF FET N Channel 500V Push- 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR MOSFET
ARF477FL_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR
ARF500 12R J 功能描述:RES CHAS MNT 12 OHM 5% 500W 制造商:ohmite 系列:ARF 包裝:散裝 零件狀態(tài):在售 電阻值:12 Ohms 容差:±5% 功率（W）:500W 成分:繞線 溫度系數(shù):±150ppm/°C 工作溫度:0°C ~ 200°C 特性:脈沖耐受 涂層，外殼類型:鋁 安裝特性:螺釘孔 大小/尺寸:10.630" 長 x 3.110" 寬 (270.00mm x 79.00mm) 高度 - 安裝（最大值）:0.728"（18.50mm） 引線形式:導(dǎo)線引線 封裝/外殼:矩形外殼 故障率:- 標(biāo)準(zhǔn)包裝:1
ARF500 16R J 功能描述:RES CHAS MNT 16 OHM 5% 500W 制造商:ohmite 系列:ARF 包裝:散裝 零件狀態(tài):在售 電阻值:16 Ohms 容差:±5% 功率（W）:500W 成分:繞線 溫度系數(shù):±150ppm/°C 工作溫度:0°C ~ 200°C 特性:脈沖耐受 涂層，外殼類型:鋁 安裝特性:螺釘孔 大小/尺寸:10.630" 長 x 3.110" 寬 (270.00mm x 79.00mm) 高度 - 安裝（最大值）:0.728"（18.50mm） 引線形式:導(dǎo)線引線 封裝/外殼:矩形外殼 故障率:- 標(biāo)準(zhǔn)包裝:1
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*