參數(shù)資料
型號(hào)： AS29LV400B-80TC
英文描述： IC-SMD-4M FLASH BTM BOOT SECT
中文描述： 集成電路表面貼裝，4分閃光溴代三氟獒烷開(kāi)機(jī)膚效應(yīng)
文件頁(yè)數(shù)： 3/25頁(yè)
文件大小： 463K
代理商： AS29LV400B-80TC
AS29LV800
3/22/01;
V.1.0
Alliance Semiconductor
P. 3 of 25
March 2001
Operating modes
Mode
L = Low (<V
IL
) = logic 0; H = High (>V
IH
) = logic 1; V
ID
= 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = V
IH
. In ×8 mode, BYTE = V
IL
with DQ8-DQ14 in high Z and DQ15 = A-1.
Verification of sector protect/unprotect during A9 = V
ID.
Mode definitions
Item
CE
OE
WE
A0
A1
A6
A9
RESET
DQ
ID read MFR code
L
L
H
L
L
L
V
ID
V
ID
A9
H
Code
ID read device code
L
L
H
H
L
L
H
Code
Read
L
L
H
A0
A1
A6
H
D
OUT
High Z
Standby
H
X
X
X
X
X
X
H
Output disable
L
H
H
X
X
X
X
H
High Z
Write
L
H
L
A0
A1
A6
A9
H
D
IN
X
Enable sector protect
L
V
ID
V
ID
Pulse/L
L
H
L
V
ID
V
ID
H
Sector unprotect
L
Pulse/L
L
H
H
H
X
Temporary sector
unprotect
Verify sector protect
Verify sector unprotect
X
X
X
X
X
X
X
V
ID
X
L
L
H
L
H
L
V
ID
V
ID
X
H
Code
L
L
H
L
H
H
H
Code
Hardware Reset
X
X
X
X
X
X
L
High Z
Description
ID MFR code,
device code
Selected by A9 = V
ID
(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (V
IL
) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.
When A0 is high (V
IH
), D
OUT
represents the device code for the AS29LV800.
Selected with CE = OE = L, WE = H. Data is valid in t
ACC
time after addresses are stable, t
CE
after CE is low
and t
OE
after OE is low.
Selected with CE = H. Part is powered down, and I
CC
reduced to <1.0 μA when CE = V
CC
± 0.3V = RESET. If
activated during an automated on-chip algorithm, the device completes the operation before entering
standby.
Read mode
Standby
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Write
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.
Enable
sector protect
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page 14.
Sector
unprotect
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm
on page 14.
Verify sector
protect/
unprotect
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial
programming equipment. Determine if sector protection exists in a system by writing the ID read command
sequence and reading location XXX02h, where address bits A12–18 select the defined sector addresses. A
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS29LV400B-80TI 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90SC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90SI 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90TC 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
AS29LV400B-90TI 制造商:ALSC 制造商全稱(chēng):Alliance Semiconductor Corporation 功能描述:3V 512K x 8/256K x 16 CMOS Flash EEPROM
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