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參數(shù)資料
| 型號： | AS6UA5128-BC |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| 中文描述： | 2.3V至3.6V的為512k】8 Intelliwatt低功耗CMOS SRAM的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 160K |
| 代理商： | AS6UA5128-BC |
AS6UA5128
10/6/00
ALLIANCE SEMICONDUCTOR
3
Recommended operating condition (over the operating range)
Capacitance (f = 1 MHz, T
a
= Room temperature, V
CC
= NOMINAL)
2
Parameter
Symbol
Input capacitance
C
IN
I/O capacitance
C
I/O
Parameter
Description
Test Conditions
Min
Max
Unit
V
OH
Output HIGH Voltage
I
OH
= –2.1mA
V
CC
= 2.7V
2.4
V
I
OH
= –0.5mA
V
CC
= 2.3V
2.0
V
OL
Output LOW Voltage
I
OL
= 2.1mA
V
CC
= 2.7V
0.4
V
I
OL
= 0.5mA
V
CC
= 2.3V
0.4
V
IH
Input HIGH Voltage
V
CC
= 2.7V
2.2
V
CC
+ 0.5
V
V
CC
= 2.3V
2.0
V
CC
+ 0.3
V
IL
Input LOW Voltage
V
CC
= 2.7V
–0.5
0.8
V
V
CC
= 2.3V
–0.3
0.6
I
IX
Input Load Current
GND < V
IN
< V
CC
–1
+1
μ
A
I
OZ
Output Load Current
GND < V
O
< V
CC
; Outputs High Z
–1
+1
μ
A
I
CC
V
CC
Operating Supply
Current
CS = V
IL
,
I
OUT
= 0mA, f = 0,
V
IN
= V
IL
or V
IH
V
CC
= 3.6V
2
mA
V
CC
= 2.7V
1
I
CC1
@
1 MHz
Average V
CC
Operating
Supply Current at 1
MHz
CS < 0.2V, V
IN
< 0.2V,
or V
IN
> V
CC
– 0.2V,
f = 1 mS
V
CC
= 3.6V
5
mA
V
CC
= 2.7V
4
I
CC2
Average V
CC
Operating
Supply Current
CS
≠
V
IL
, V
IN
= V
IL
or
V
IH
, f = f
Max
V
CC
= 3.6V (55/70 ns)
40/30
mA
V
CC
= 2.7V (70 ns)
25
I
SB
CS Power Down
Current; TTL Inputs
CS > V
IH
, other inputs = 0V
– V
CC
V
CC
= 3.6V
100
μ
A
V
CC
= 2.7V
I
SB1
CS Power Down
Current; CMOS Inputs
CS > V
– 0.2V > V
CC
– 0.2V,
other inputs = 0V – V
CC
, f =
f
Max
V
CC
= 3.6V
20
μ
A
V
CC
= 2.7V
15
I
SBDR
Data Retention
CS > V
CC
– 0.1V,
V
CC
– 0.1V, f = 0
V
CC
= 1.2V
2
μ
A
Signals
Test conditions
V
IN
= 0V
V
IN
= V
OUT
= 0V
Max
5
Unit
pF
A, CS, WE, OE
I/O
7
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS6UA5128 | 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 到 3.6V 512K×8 Intelliwatt 低功耗 CMOS 靜態(tài)RAM) |
| AS6UA5128-BI | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| AS6UA5128 | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| ASD355-N | Silicon epitaxial planar type |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6UA5128-BI | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| AS6VA2516-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA2516-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA25616 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
| AS6VA25616-BC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
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