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參數(shù)資料
| 型號(hào)： | AS6UA5128-BC |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| 中文描述： | 2.3V至3.6V的為512k】8 Intelliwatt低功耗CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大小： | 160K |
| 代理商： | AS6UA5128-BC |
AS6UA5128
10/6/00
ALLIANCE SEMICONDUCTOR
5
Write cycle (over the operating range)
11
Write waveform 1 (WE controlled)
10,11
Write waveform 2 (CS controlled)
10,11
Parameter
Symbol
–55
–70
Unit
Notes
Min
Max
Min
Max
Write cycle time
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
55
–
70
–
ns
Chip select to write end
Address setup to write end
40
40
–
–
60
60
–
–
ns
ns
12
Address setup time
0
–
0
–
ns
12
Write pulse width
Address hold from end of write
35
0
–
–
55
0
–
–
ns
ns
Data valid to write end
25
–
30
–
ns
Data hold time
Write enable to output in high Z
0
0
–
0
0
–
ns
ns
4, 5
4, 5
20
20
Output active from write end
5
–
5
–
ns
4, 5
t
AW
t
AH
t
WC
Address
WE
D
OUT
t
DH
t
OW
t
DW
Data valid
t
WZ
t
WP
t
AS
D
IN
t
AW
Address
CS
WE
D
OUT
t
CW
t
WP
t
DW
Data valid
t
DH
t
AH
t
WZ
t
WC
t
AS
D
IN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS6UA5128 | 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 到 3.6V 512K×8 Intelliwatt 低功耗 CMOS 靜態(tài)RAM) |
| AS6UA5128-BI | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| AS6UA5128 | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| ASD355-N | Silicon epitaxial planar type |
| ASD500V-N | Advanced Schottky Barrier Diodes - Surface mount small signal type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS6UA5128-BI | 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| AS6VA2516-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA2516-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA25616 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
| AS6VA25616-BC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
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