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參數(shù)資料
| 型號： | AS6UA5128-BI |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| 中文描述： | 2.3V至3.6V的為512k】8 Intelliwatt低功耗CMOS SRAM的 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 160K |
| 代理商： | AS6UA5128-BI |
AS6UA5128
10/6/00
ALLIANCE SEMICONDUCTOR
7
Typical DC and AC characteristics
Normalized supply current
vs. supply voltage
V
CC
= V
CC
typ
V
IN
= V
CC
typ
Supply voltage (V)
1.7
0.0
0.2
0.6
0.8
0.4
1.0
1.2
1.4
N
C
Supply Voltage (V)
0.0
0.25
0.5
0.75
1.0
N
A
Normalized access time
vs. supply voltage
Ambient temperature (°C)
–55
105
25
0.5
1.0
0.0
1.5
2.0
2.5
N
S
Normalized standby current
vs. ambient temperature
Supply voltage (V)
0.0
0.2
0.6
0.8
0.4
1.0
1.2
1.4
N
S
Normalized standby current
vs. supply voltage
I
SB2
Supply voltage (V)
0.10
0.50
1.0
1.5
N
C
Normalized I
vs. Cycle Time
2.2
2.7
3.2
3.7
1.7
2.2
2.7
3.2
3.7
T
A
= 25
°
C
3.0
–0.5
1
5
10
15
1
1.9
2.8
3.7
V
IN
= V
CC
typ
T
A
= 25
°
C
V
IN
= 3.6V
T
A
= 25
°
C
V
IN
= V
CC
typ
T
A
= 25
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| AS6UA5128 | 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM |
| ASD355-N | Silicon epitaxial planar type |
| ASD500V-N | Advanced Schottky Barrier Diodes - Surface mount small signal type |
| ASD500V | ER 10C 10#16 PIN RECP LINE |
| ASD501V-N | Advanced Schottky Barrier Diodes - Surface mount small signal type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS6VA2516-BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA2516-TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| AS6VA25616 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
| AS6VA25616-BC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
| AS6VA25616-BI | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
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