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參數(shù)資料
| 型號(hào)： | AT-31011 |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 137K |
| 代理商： | AT-31011 |
4-36
AT-31011, AT-31033 Typical Performance
P
0
0
FREQUENCY (GHz)
1.0
1.5
15
6
3
0.5
2.5
9
2.0
12
10 mA
2 mA
5 mA
2 mA
5 mA
10 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
10 mA
Figure 8. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 5 V.
Figure 9. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
Figure 10. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 5 V.
P
0
-4
FREQUENCY (GHz)
1.0
1.5
4
-2
0.5
2.5
0
2.0
2
5 mA
2 mA
Figure 13. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 12. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 1 V.
Figure 11. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 1 V.
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
G
0
0
FREQUENCY (GHz)
1.0
1.5
20
8
4
0.5
2.5
12
2.0
16
2 mA
5 mA
Figure 14. AT-31011 Noise Figure and
Associated Gain at V
= 2.7 V,
I
=1mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Figure 16. AT-31011 and AT-31033
Intermodulation Products vs. Output
Power at V
= 2.7 V, I
= 10 mA,
900MHz with Optimal Tuning.
Figure 15. AT-31033 Noise Figure and
Associated Gain at V
= 2.7 V,
I
=1mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
G
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
N
Ga
NF
G
-50
0
TEMPERATURE (°C)
50
25
10
5
0
100
15
20
0
2.5
1.0
0.5
1.5
2.0
N
Ga
NF
I
-9
-80
POWER PER TONE (dBm)
-3
0
0
-60
-6
6
-40
3
-20
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT-31011-BLK | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31011-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31033 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-31033-TR1 | Low Current, High Performance NPN Silicon Bipolar Transistor |
| AT-32032 | Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT31011BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 20MA I(C) | SOT-143 |
| AT-31011-BLK | 制造商:HEWLETT 功能描述: |
| AT-31011-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT31011TR1 | 制造商:Hewlett Packard Co 功能描述: |
| AT-31011-TR1 | 制造商:HEWLETT 功能描述: |
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