參數(shù)資料
型號(hào)： AT-31011
英文描述： Low Current, High Performance NPN Silicon Bipolar Transistor
中文描述： 低電流，高性能NPN硅雙極晶體管
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 137K
代理商： AT-31011
4-38
AT-31011 Typical Scattering Parameters,
V
CE
= 2.7 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.96
-7
11.11
3.59
174
0.5
0.93
-32
10.66
3.41
152
0.9
0.83
-56
9.90
3.13
132
1.0
0.81
-61
9.53
2.99
128
1.5
0.68
-89
8.32
2.61
107
1.8
0.62
-104
7.52
2.38
2.0
0.58
-113
7.15
2.28
2.4
0.52
-133
5.98
1.99
3.0
0.45
-160
4.65
1.71
4.0
0.43
158
2.75
1.37
5.0
0.46
123
1.16
1.14
S
12
Mag
0.01
0.05
0.08
0.08
0.10
0.11
0.11
0.11
0.11
0.10
0.12
S
22
dB
-39.92
-26.43
-22.32
-21.66
-19.90
-19.46
-19.24
-19.15
-19.37
-19.60
-18.16
Ang
86
69
55
53
40
34
31
27
25
29
41
Mag
0.999
0.95
0.91
0.90
0.84
0.80
0.78
0.75
0.72
0.69
0.68
Ang
-2
-13
-22
-24
-32
-36
-38
-42
-46
-56
-66
96
90
77
61
39
20
AT-31011 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 2.7 V, I
C
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
0.5
0.6
1.1
1.6
R
n
Mag
0.92
0.85
0.68
0.55
Ang
13
29
67
98
0.85
0.73
0.46
0.28
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters,
V
CE
= 2.7 V, I
C
= 1 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.94
-7
11.07
3.58
173
0.5
0.89
-32
10.35
3.29
146
0.9
0.72
-54
9.27
2.91
123
1.0
0.69
-59
8.80
2.76
118
1.5
0.48
-83
7.32
2.32
95
1.8
0.38
-97
6.39
2.09
84
2.0
0.33
-107
5.91
1.97
77
2.4
0.23
-130
4.73
1.72
65
3.0
0.14
-178
3.43
1.48
49
4.0
0.19
103
1.62
1.21
28
5.0
0.30
67
0.25
1.03
12
AT-31033 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 2.7 V, I
C
= 1 mA
Γ
OPT
Freq
F
min[1]
GHz
dB
Mag
Ang
0.5
[2]
0.5
0.90
12
0.9
0.6
0.82
28
1.8
1.1
0.57
68
2.4
1.6
0.41
100
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
S
12
Mag
0.01
0.06
0.10
0.10
0.13
0.13
0.14
0.15
0.17
0.23
0.33
S
22
dB
-37.44
-24.11
-20.27
-19.65
-18.01
-17.43
-17.07
-16.46
-15.25
-12.62
-9.72
Ang
86
70
58
56
48
46
45
46
48
51
47
Mag
0.999
0.94
0.87
0.86
0.78
0.74
0.72
0.70
0.67
0.65
0.63
Ang
-3
-15
-25
-26
-33
-36
-38
-41
-46
-57
-71
R
n
0.70
0.60
0.38
0.22
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
Figure 19. AT-31011 Gains vs.
Frequency at V
CE
= 2.7 V, I
C
= 1 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
Figure 20. AT-31033 Gains vs.
Frequency at V
CE
= 2 .7 V, I
C
= 1 mA.
相關(guān)PDF資料
PDF描述
AT-31011-BLK Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31011-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31033-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT31011BLK 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 20MA I(C) | SOT-143
AT-31011-BLK 制造商:HEWLETT 功能描述:
AT-31011-BLKG 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT31011TR1 制造商:Hewlett Packard Co 功能描述:
AT-31011-TR1 制造商:HEWLETT 功能描述:
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