參數(shù)資料
型號： AT-31011
英文描述： Low Current, High Performance NPN Silicon Bipolar Transistor
中文描述： 低電流，高性能NPN硅雙極晶體管
文件頁數(shù)： 9/10頁
文件大?。?/td> 137K
代理商： AT-31011
4-41
AT-31011 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 10 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.77
-21
27.41
23.46
162
0.5
0.48
-77
22.97
14.07
118
0.9
0.32
-112
19.14
9.06
1.0
0.30
-119
18.34
8.26
1.5
0.23
-151
15.23
5.78
1.8
0.22
-168
13.75
4.87
2.0
0.21
-178
12.91
4.42
2.4
0.21
163
11.46
3.74
3.0
0.23
142
9.60
3.02
4.0
0.27
116
7.36
2.33
5.0
0.33
96
5.70
1.93
S
12
Mag
0.01
0.03
0.04
0.04
0.06
0.07
0.07
0.09
0.11
0.14
0.18
S
22
dB
-41.49
-30.66
-27.77
-27.11
-24.56
-23.37
-22.62
-21.25
-19.45
-17.08
-14.97
Ang
80
61
59
60
60
60
60
59
58
54
48
Mag
0.95
0.70
0.61
0.59
0.56
0.55
0.55
0.54
0.53
0.52
0.51
Ang
-8
-24
-27
-27
-29
-31
-32
-36
-39
-48
-58
98
95
80
73
69
61
50
34
19
AT-31011 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 10 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
1.3
1.4
1.7
2.0
R
n
Mag
0.45
0.37
0.25
0.18
Ang
11
33
86
129
0.55
0.46
0.29
0.18
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters,
V
CE
= 5 V, I
C
= 10 mA, Common Emitter, Z
O
= 50
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.1
0.75
-19
26.79
21.84
155
0.5
0.37
-45
20.17
10.20
107
0.9
0.23
-42
15.79
6.16
1.0
0.21
-42
14.94
5.58
1.5
0.15
-30
11.75
3.87
1.8
0.14
-21
10.30
3.27
2.0
0.13
-17
9.47
2.97
2.4
0.13
-7
8.08
2.54
3.0
0.13
3
6.47
2.11
4.0
0.14
19
4.61
1.7
5.0
0.18
28
3.33
1.47
S
12
Mag
0.01
0.04
0.07
0.08
0.11
0.14
0.15
0.18
0.22
0.29
0.37
S
22
dB
-38.82
-27.39
-23.00
-22.11
-18.86
-17.37
-16.51
-15.00
-13.14
-10.67
-8.73
Ang
79
73
72
72
69
66
65
62
57
48
38
Mag
0.92
0.67
0.62
0.61
0.60
0.59
0.58
0.57
0.56
0.53
0.49
Ang
-10
-20
-22
-23
-27
-29
-31
-35
-41
-52
-64
90
86
73
67
63
55
45
29
14
AT-31033 Typical Noise Parameters,
Common Emitter, Z
O
= 50
, 5 V, I
C
= 10 mA
Γ
OPT
Freq
GHz
0.5
[2]
0.9
1.8
2.4
F
min[1]
dB
1.3
1.4
1.7
2.0
R
n
-
0.38
0.34
0.23
0.17
Mag
0.42
0.31
0.16
0.08
Ang
10
30
80
118
Notes:
1. Matching constraints may make F
values associated with high |
Γ
| values
unacheivable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
S21
MSG
MSG
MAG
Figure 26. AT-31033 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 10 mA.
G
0
0
FREQUENCY (GHz)
2
3
30
1
5
10
4
20
MSG
MAG
S21
MSG
Figure 25. AT-31011 Gains vs.
Frequency at V
CE
= 5 V, I
C
= 10 mA.
相關(guān)PDF資料
PDF描述
AT-31011-BLK Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31011-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-31033-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor
AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor(小電流，高性能NPN硅雙極型晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT31011BLK 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 5.5V V(BR)CEO | 20MA I(C) | SOT-143
AT-31011-BLK 制造商:HEWLETT 功能描述:
AT-31011-BLKG 功能描述:射頻雙極小信號晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT31011TR1 制造商:Hewlett Packard Co 功能描述:
AT-31011-TR1 制造商:HEWLETT 功能描述:
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