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參數(shù)資料
| 型號(hào)： | AT-32011-BLK |
| 英文描述： | Low Current, High Performance NPN Silicon Bipolar Transistor |
| 中文描述： | 低電流，高性能NPN硅雙極晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | AT-32011-BLK |
4-54
Electrical Specifications, T
A
= 25
°
C
AT-32011
Typ.
AT-32033
Typ.
Symbol
NF
Parameters and Test Conditions
Noise Figure
V
CE
= 2.7 V, I
C
= 2 mA
Associated Gain
V
CE
= 2.7 V, I
C
= 2 mA
Forward Current Transfer Ratio
V
CE
= 2.7 V, I
C
= 2 mA
Collector Cutoff Current
V
CB
= 3 V
Emitter Cutoff Current
V
EB
= 1 V
Units
Min.
Max.
Min.
Max.
f = 0.9 GHz
dB
1.0
[1]
1.3
[1]
1.0
[2]
1.3
[2]
G
A
f = 0.9 GHz
dB
12.5
[1]
14
[1]
11
[2]
12.5
[2]
h
FE
–
70
300
70
300
I
CBO
μ
A
0.2
0.2
I
EBO
μ
A
1.5
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Maximum
[1]
1.5
11
5.5
32
200
150
-65 to 150
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2, 3]
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
:
θ
jc
= 550
°
C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25
°
C.
3. Derate at 1.82 mW/
°
C for T
C
> 40
°
C.
1000 pF
V
BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
V
CC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (
ε
= 4.8)
RF IN
W = 30
L = 60
CKT A: 25
CKT B: 5
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-32011-BLKG | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32011-TR1 | 功能描述:IC TRANS NPN BIPOLAR SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| AT-32011-TR1G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-32011-TR2G | 功能描述:射頻雙極小信號(hào)晶體管 Transistor Si Low Current RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT320240Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:李守華 15889415469 |
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