參數(shù)資料
型號: AT-41511-BLKG
元件分類: 小信號晶體管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, PLASTIC, SMT, 4 PIN
文件頁數(shù): 4/10頁
文件大小: 119K
代理商: AT-41511-BLKG
3
Figure 9. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 8 V, with Optimal
Tuning.
Figure 8. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 5 V, with Optimal
Tuning.
Figure 7. AT-41511 and AT-41533 P1dB vs.
Frequency and Bias at VCE = 2.7 V, with Optimal
Tuning.
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
P
1
dB
(dBm)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
25 mA
10 mA
5 mA
AT-41511, AT-41533 Typical Performance
Figure 2. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 5 V.
Figure 1. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 2.7 V.
Figure 3. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at VCE = 8 V.
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
2, 5 mA
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
10 mA
5 mA
NOISE
FIGURE
(dB)
0.1
3.0
0
FREQUENCY (GHz)
0.6
2.1
2.6
2.5
1.5
0.5
1.6
2.0
1.0
1.1
25 mA
2 mA
10 mA
5 mA
G
a
PKG
11
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
20
15
10
G
a
PKG
33
(dB)
PKG 11
PKG 33
25
5
10, 25 mA
2 mA
5 mA
2 mA
5 mA
10, 25 mA
Figure 6. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 8 V.
Figure 5. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 5 V.
Figure 4. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at VCE = 2.7 V.
G
a
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
G
a
(dB)
0.1
20
0
FREQUENCY (GHz)
0.6
2.1
2.6
15
10
5
1.6
1.1
PKG 11
PKG 33
10, 25 mA
5 mA
10, 25 mA
5 mA
相關(guān)PDF資料
PDF描述
AT-41533-TR2G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41533-BLKG C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41511-TR1G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41511-TR2G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
AT-41533-TR1G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT-41511-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
AT-41511-TR1 功能描述:IC TRANS NPN GP BIPOLAR SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿(最大):4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
AT-41511-TR1G 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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