參數(shù)資料
型號(hào): AT-42000-GP4
元件分類: 小信號(hào)晶體管
英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: DIE-2
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 168K
代理商: AT-42000-GP4
AT-42000 Typical Performance, TA = 25 °C
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, I C = 35 mA.
GAIN
(dB
)
0.1
0.5
0.3
1.0
3.0 6.0
IC (mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
24
20
16
12
8
4
G
1dB
(dB
)
P
1dB
(dBm)
0
10
20
30
40
50
P1dB
G1dB
2.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S21E|2
IC (mA)
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
20
16
12
8
4
0
|S
21E
|2
GAIN
(dB
)
0
10
20
30
40
50
1.0 GHz
2.0 GHz
4.0 GHz
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
10 V
4 V
6 V
4 V
10 V
6 V
24
20
16
12
16
14
12
10
G
1dB
(dB
)
P
1dB
(dBm)
0
10
20
30
40
50
P1dB
G1dB
FREQUENCY (GHz)
Figure 6. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, I C = 10 mA.
GAIN
(dB
)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB
)
0.5
2.0
1.0
3.0 4.0 5.0
GA
NFO
IC (mA)
Figure 4. Insertion Power Gain vs.
Collector Current and Voltage.
f = 2.0 GHz.
13
12
11
10
9
8
7
|S
21E
|2
GAIN
(dB
)
0
10
20
30
40
50
10 V
6 V
4 V
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