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參數(shù)資料
| 型號： | ATF-33143-BLK |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 154K |
| 代理商： | ATF-33143-BLK |
4
ATF-33143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This
circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements.
Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
Figure 8. P1dB vs. Bias [1,2] at 2 GHz.
Figure 9. P1dB vs. Bias [1,2] Tuned for NF
@ 4V, 80 mA at 900 MHz.
Figure 10. NF and Ga vs. Bias [1] at
2 GHz.
Figure 11. NF and Ga vs. Bias [1] at
900 MHz.
IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias [1] at
2 GHz.
OIP3,
IIP3
(dBm)
0
120
40
30
20
10
0
40
20
100
80
60
2 V
3 V
4 V
IDSQ (mA)
Figure 7. OIP3, IIP3 vs. Bias [1] at
900 MHz.
OIP3,
IIP3
(dBm)
40
30
20
10
0
2 V
3 V
4 V
0
120
40
20
100
80
60
IDSQ (mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0
120
40
20
80
100
60
NF
Ga
IDSQ (mA)
G
a
(dB)
16
15
14
13
12
11
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
NOISE
FIGURE
(dB)
2 V
3 V
4 V
0
120
40
20
80
100
60
IDSQ (mA)
G
a
(dB)
22
21
20
19
18
17
16
1.2
1.0
0.8
0.6
0.4
0.2
0
NOISE
FIGURE
(dB)
2 V
3 V
4 V
NF
Ga
0
120
40
20
80
100
60
IDSQ (mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0
120
40
20
80
100
60
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-33143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189 | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| ATS535SSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
| ATS535JSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
| ATS611LSB | PROXIMITY SENSOR-HALL EFFECT, 0.5-2.5mm, 0.40V, ROUND, THROUGH HOLE MOUNT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-33143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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