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參數(shù)資料
| 型號(hào)： | ATF-33143-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 14/18頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | ATF-33143-BLK |
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5
ATF-33143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between optimal
noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual
measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
Figure 12. Fmin vs. Frequency and
Current at 4 V.
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
FREQUENCY (MHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
P
1dB
,OIP3
(dBm)
0
8000
40
35
30
25
20
15
4000
2000
6000
25
°C
-40
°C
85
°C
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias [1,2] at 5.8 GHz.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
F
min
(dB)
010
1.5
1.0
0.5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
G
a
(dB)
010
30
25
20
15
10
5
0
4
28
6
80 mA
60 mA
FREQUENCY (GHz)
G
a
(dB)
NOISE
FIGURE
(dB)
25
20
15
10
5
2.0
1.5
1.0
0.5
0
25
°C
-40
°C
85
°C
010
4
28
6
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4 V, IDS = 80 mA.
IDSQ (mA)
OIP3,
P
1dB
(dBm),
GAIN
(dB)
35
30
25
20
15
10
5
0
NOISE
FIGURE
(dB)
P1dB
OIP3
Gain
NF
0
120
40
20
80
100
60
IDSQ (mA)
OIP3,
P
1dB
(dBm),
GAIN
(dB)
35
30
25
20
15
10
5
0
NOISE
FIGURE
(dB)
3
2
1
0
P1dB
OIP3
NF
Gain
0
120
40
20
80
100
60
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-33143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-33143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-33143-G | 制造商:Avago Technologies 功能描述:Transistor JFET N-Ch 5.5V 305mA SOT343 |
| ATF-33143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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