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參數(shù)資料
| 型號： | ATF-551M4-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 18/23頁 |
| 文件大?。?/td> | 183K |
| 代理商： | ATF-551M4-TR1G |
4
ATF-551M4 Typical Performance Curves
Notes:
1. Measurements at 900MHz were made using
an ICM fixture with a double stub tuner at the
input tuned for low noise and a double stub
tuner at the output tuned for maximum OIP3.
Circuit losses have been de-embedded from
actual measurements.
2. The Fmin values are based on a set of 16
noise figure measurements made at 16
different impedances using an ATN NP5 test
system. From these measurements Fmin is
calculated. Refer to the noise parameter
measurement section for more information.
Figure 6. Gain vs. Ids and Vds at 900 MHz
[1].
Id (mA)
GAIN
(dB)
035
15
530
25
20
10
26
25
24
23
22
21
20
19
18
2V
2.7V
3V
Figure 7. Fmin vs. Ids and Vds at 900 MHz
[2].
Id (mA)
Fmin
(dB)
035
15
530
25
20
10
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2V
2.7V
3V
Figure 9. IIP3 vs. Ids and Vds at 900 MHz
[1].
Id (mA)
IIP3
(dBm)
035
15
530
25
20
10
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
Figure 10. P1dB vs. Ids and Vds at 900 MHz
[1].
Id (mA)
P1dB
(dBm)
035
15
530
25
20
10
18
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
Figure 8. OIP3 vs. Ids and Vds at 900 MHz
[1].
Id (mA)
OIP3
(dBm)
035
15
530
25
20
10
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
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| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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