參數(shù)資料
型號： ATF-551M4-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù)： 23/23頁
文件大?。?/td> 183K
代理商： ATF-551M4-TR1G
9
ATF-551M4 Typical Scattering Parameters,
VDS = 2V, IDS = 15 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.6
21.93
12.489
175.5
0.006
86.2
0.765
-3.7
33.18
0.5
0.947
-31.6
21.41
11.757
156.7
0.029
70.9
0.715
-17.0
26.08
0.9
0.892
-54.7
20.67
10.804
142.0
0.048
59.7
0.659
-29.6
23.52
1.0
0.880
-60.1
20.46
10.547
138.6
0.052
57.1
0.641
-32.5
23.07
1.5
0.812
-84.9
19.26
9.186
123.0
0.067
46.0
0.555
-45.0
21.37
1.9
0.768
-102.1
18.23
8.153
112.3
0.076
38.7
0.489
-53.1
20.31
2.0
0.758
-106.1
17.98
7.923
109.9
0.077
37.2
0.474
-55.0
20.12
2.5
0.718
-124.1
16.73
6.859
98.9
0.084
30.5
0.407
-63.2
19.12
3.0
0.692
-139.7
15.55
5.991
89.3
0.088
25.3
0.352
-70.2
18.33
4.0
0.671
-164.5
13.47
4.716
73.3
0.092
18.0
0.272
-82.3
17.10
5.0
0.670
176.6
11.70
3.845
59.7
0.095
13.1
0.222
-94.5
16.07
6.0
0.671
163.5
10.30
3.273
48.3
0.098
10.5
0.181
-103.2
15.24
7.0
0.674
151.5
9.06
2.838
37.4
0.101
8.2
0.164
-115.4
14.49
8.0
0.676
141.6
8.06
2.528
27.0
0.105
6.1
0.152
-128.5
12.66
9.0
0.684
130.9
7.14
2.276
16.5
0.111
3.7
0.150
-143.3
11.51
10.0
0.682
118.0
6.33
2.072
5.6
0.117
0.6
0.156
-156.9
10.35
11.0
0.686
105.1
5.59
1.903
-5.0
0.124
-3.1
0.170
-169.0
9.57
12.0
0.691
91.4
4.88
1.753
-16.1
0.132
-7.6
0.183
-179.3
8.87
13.0
0.708
80.9
4.13
1.609
-26.9
0.140
-12.3
0.181
165.9
8.27
14.0
0.744
66.5
3.42
1.483
-38.5
0.148
-18.6
0.188
145.0
8.14
15.0
0.756
54.9
2.59
1.347
-49.7
0.155
-24.9
0.217
125.0
7.23
16.0
0.805
45.0
1.59
1.201
-60.2
0.158
-31.2
0.253
106.8
7.38
17.0
0.825
37.0
0.61
1.073
-70.4
0.161
-37.5
0.310
89.4
6.61
18.0
0.870
30.7
-0.41
0.954
-80.1
0.163
-43.8
0.373
74.9
7.67
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.21
0.61
-6.1
0.12
24.12
0.9
0.21
0.55
7.0
0.12
22.18
1.0
0.27
0.50
11.4
0.11
22.12
1.9
0.42
0.46
38.1
0.10
18.61
2.0
0.37
0.43
42.7
0.10
18.52
2.4
0.44
0.39
52.9
0.10
17.34
3.0
0.52
0.32
74.4
0.08
16.21
3.9
0.57
0.28
108.3
0.07
14.65
5.0
0.71
0.30
149.5
0.06
13.27
5.8
0.85
0.35
170.0
0.05
12.38
6.0
0.86
0.35
171.7
0.05
12.19
7.0
0.97
0.38
-165.9
0.06
11.24
8.0
1.08
0.43
-152.1
0.07
10.49
9.0
1.22
0.47
-138.1
0.10
9.84
10.0
1.44
0.46
-122.5
0.17
8.96
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 2V, IDS = 15 mA
40
30
20
10
0
-10
Figure 27. MSG/MAG and |S21|
2 vs.
Frequency at 2V, 15 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
AUIRF1010EZL 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010EZS 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-551M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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