參數(shù)資料
型號(hào)： ATF-551M4-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁(yè)數(shù)： 22/23頁(yè)
文件大小： 183K
代理商： ATF-551M4-TR1G
8
ATF-551M4 Typical Scattering Parameters,
VDS = 2V, IDS = 10 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.0
20.41
10.479
175.9
0.007
86.3
0.803
-3.3
31.75
0.5
0.954
-29.1
19.95
9.946
158.2
0.031
71.6
0.758
-15.6
25.06
0.9
0.906
-50.7
19.35
9.280
144.2
0.052
60.8
0.710
-27.4
22.52
1.0
0.896
-55.7
19.18
9.103
141.0
0.056
58.3
0.692
-30.2
22.11
1.5
0.833
-79.5
18.15
8.080
125.6
0.075
46.8
0.611
-42.3
20.32
1.9
0.790
-96.5
17.22
7.260
114.9
0.085
39.0
0.547
-50.4
19.32
2.0
0.781
-100.4
17.00
7.078
112.5
0.087
37.3
0.532
-52.3
19.10
2.5
0.739
-118.5
15.84
6.197
101.1
0.095
29.8
0.463
-60.6
18.14
3.0
0.710
-134.4
14.74
5.459
91.2
0.099
23.7
0.404
-67.6
17.41
4.0
0.683
-160.0
12.75
4.341
74.5
0.104
14.8
0.318
-79.6
16.21
5.0
0.679
-179.8
11.03
3.559
60.3
0.105
8.6
0.263
-91.2
15.30
6.0
0.680
166.5
9.65
3.036
48.5
0.107
5.0
0.220
-99.5
14.53
7.0
0.681
154.0
8.43
2.638
37.2
0.107
2.1
0.199
-111.0
13.92
8.0
0.683
143.7
7.43
2.353
26.4
0.110
-0.3
0.185
-123.4
13.30
9.0
0.690
132.7
6.53
2.122
15.7
0.113
-2.6
0.181
-137.7
11.27
10.0
0.687
119.7
5.72
1.932
4.5
0.117
-5.4
0.185
-151.1
9.97
11.0
0.691
106.5
4.98
1.775
-6.4
0.122
-8.4
0.196
-163.5
9.14
12.0
0.696
92.6
4.28
1.636
-17.7
0.129
-12.3
0.209
-174.4
8.44
13.0
0.713
81.8
3.53
1.501
-28.6
0.135
-16.2
0.206
171.4
7.80
14.0
0.747
67.4
2.82
1.384
-40.4
0.143
-21.8
0.211
151.2
7.62
15.0
0.759
55.5
1.97
1.255
-51.8
0.149
-27.4
0.237
131.8
6.73
16.0
0.808
45.4
1.00
1.122
-62.4
0.153
-33.3
0.269
113.3
6.90
17.0
0.828
37.3
-0.01
0.999
-72.7
0.157
-39.2
0.322
95.4
6.20
18.0
0.870
30.9
-1.04
0.887
-82.6
0.159
-45.2
0.383
80.1
7.47
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.24
0.62
-4.3
0.14
23.50
0.9
0.24
0.56
8.8
0.13
21.66
1.0
0.28
0.52
13.5
0.12
21.61
1.9
0.45
0.47
38.6
0.11
18.04
2.0
0.39
0.47
42.9
0.11
17.88
2.4
0.47
0.42
52.8
0.11
16.76
3.0
0.55
0.35
74.0
0.09
15.66
3.9
0.61
0.32
105.4
0.08
14.10
5.0
0.74
0.33
144.0
0.06
12.74
5.8
0.89
0.36
164.3
0.05
11.83
6.0
0.90
0.37
166.1
0.05
11.63
7.0
1.03
0.38
-170.9
0.06
10.71
8.0
1.13
0.44
-157.2
0.07
9.99
9.0
1.27
0.48
-142.4
0.09
9.36
10.0
1.53
0.46
-126.0
0.17
8.46
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 2V, IDS = 10 mA
40
30
20
10
0
-10
Figure 26. MSG/MAG and |S21|
2 vs.
Frequency at 2V, 10 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
AUIRF1010EZL 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010EZS 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-551M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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