參數(shù)資料
型號(hào): ATTINY2313A-SUR
廠商: Atmel
文件頁數(shù): 87/172頁
文件大?。?/td> 0K
描述: MCU AVR 2KB FLASH 20MHZ 20SOIC
產(chǎn)品培訓(xùn)模塊: tinyAVR Introduction
標(biāo)準(zhǔn)包裝: 1,000
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 20MHz
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 18
程序存儲(chǔ)器容量: 2KB(1K x 16)
程序存儲(chǔ)器類型: 閃存
EEPROM 大?。?/td> 128 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 1.8 V ~ 5.5 V
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 20-SOIC(0.295",7.50mm 寬)
包裝: 帶卷 (TR)
其它名稱: ATTINY2313A-SUR-ND
21
8246B–AVR–09/11
ATtiny2313A/4313
The supply voltage is too low to maintain proper operation of an otherwise legitimate
EEPROM program sequence.
The supply voltage is too low for the CPU and instructions may be executed incorrectly.
EEPROM data corruption is avoided by keeping the device in reset during periods of insufficient
power supply voltage. This is easily done by enabling the internal Brown-Out Detector (BOD). If
BOD detection levels are not sufficient for the design, an external reset circuit for low V
CC can be
used.
Provided that supply voltage is sufficient, an EEPROM write operation will be completed even
when a reset occurs.
5.3.6
Program Examples
The following code examples show one assembly and one C function for erase, write, or atomic
write of the EEPROM. The examples assume that interrupts are controlled (e.g., by disabling
interrupts globally) so that no interrupts occur during execution of these functions.
Note:
Assembly Code Example
EEPROM_write:
; Wait for completion of previous write
sbic
EECR, EEPE
rjmp
EEPROM_write
; Set Programming mode
ldi
r16, (0<<EEPM1)|(0<<EEPM0)
out
EECR, r16
; Set up address (r18:r17) in address registers
out
EEARH, r18
out
EEARL, r17
; Write data (r19) to data register
out
EEDR, r19
; Write logical one to EEMPE
sbi
EECR, EEMPE
; Start eeprom write by setting EEPE
sbi
EECR, EEPE
ret
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