- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄3777 > ATTINY24A-SSNR (Atmel)MCU AVR 2KB FLASH 20MHZ 14SOIC PDF資料下載
參數(shù)資料
| 型號： | ATTINY24A-SSNR |
| 廠商： | Atmel |
| 文件頁數(shù)： | 46/135頁 |
| 文件大?。?/td> | 0K |
| 描述： | MCU AVR 2KB FLASH 20MHZ 14SOIC |
| 產(chǎn)品培訓(xùn)模塊： | MCU Product Line Introduction tinyAVR Introduction |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | AVR® ATtiny |
| 核心處理器： | AVR |
| 芯體尺寸： | 8-位 |
| 速度： | 20MHz |
| 連通性： | USI |
| 外圍設(shè)備： | 欠壓檢測/復(fù)位，POR，PWM，溫度傳感器，WDT |
| 輸入/輸出數(shù)： | 12 |
| 程序存儲器容量： | 2KB（1K x 16） |
| 程序存儲器類型： | 閃存 |
| EEPROM 大小： | 128 x 8 |
| RAM 容量： | 128 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 1.8 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 8x10b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 105°C |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | ATTINY24A-SSNRDKR |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁當(dāng)前第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁
17
8183F–AVR–06/12
ATtiny24A/44A/84A
5.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access times for the EEPROM are given in Table 5-1 on page 22. A self-timing func-
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
CC is likely to rise or fall slowly on Power-up/down. This causes the
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See “Preventing EEPROM Corruption” on page 19 for details on how to avoid
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
5.3.2
Atomic Byte Programming
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into register EEAR and data into register EEDR. If the EEPMn bits
are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the erase/write
operation. Both the erase and write cycle are done in one operation and the total programming
time is given in Table 5-1 on page 22. The EEPE bit remains set until the erase and write opera-
tions are completed. While the device is busy with programming, it is not possible to do any
other EEPROM operations.
5.3.3
Split Byte Programming
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
5.3.4
Erase
To erase a byte, the address must be written to EEAR. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in Table 5-1 on page 22). The EEPE bit remains set until the erase operation
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
5.3.5
Write
To write a location, the user must write the address into EEAR and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in Table 5-1 on page 22). The EEPE bit
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PCA8574APW,118 | IC I/O EXPANDER I2C 8B 16TSSOP |
| PCF8574TS/3,112 | IC I/O EXPANDER I2C 8B 20SSOP |
| PCF8574AP,112 | IC I/O EXPANDER I2C 8B 16DIP |
| PCF8574AT/3,512 | IC I/O EXPANDER I2C 8B 16SOIC |
| PCF8574P,112 | IC I/O EXPANDER I2C 8B 16DIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATTINY24A-SSU | 功能描述:8位微控制器 -MCU 20MHz, Ind Temp 1.8-5.5V, Green RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| ATTINY24A-SSUR | 功能描述:8位微控制器 -MCU AVR 2KB FLSH 128B EE USI ADC 20MHz 1.8V RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| ATTINY24V | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash |
| ATTINY24V_09 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash |
| ATTINY24V-10MU | 功能描述:8位微控制器 -MCU AVR 2K FLASH 128B EE & SRAM USI ADC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。