參數(shù)資料
型號： AUIRF7669L2TR1
元件分類： JFETs
英文描述： 19 A, 100 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
文件頁數(shù)： 6/11頁
文件大小： 243K
代理商： AUIRF7669L2TR1
AUIRF7669L2TR/TR1
4
www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical On-Resistance vs. Gate Voltage
Fig 4. Typical On-Resistance vs. Drain Current
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.8V
BOTTOM
5.5V
≤60μs PULSE WIDTH
Tj = 25°C
5.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
5.5V
≤60μs PULSE WIDTH
Tj = 175°C
VGS
TOP
15V
10V
8.0V
7.0V
6.5V
6.0V
5.8V
BOTTOM
5.5V
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
ID = 68A
TJ = 125°C
TJ = 25°C
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(o
n)
,D
ra
in
-t
o-
S
ou
rc
e
O
n
R
es
is
ta
nc
e
(N
or
m
al
iz
ed
)
ID = 68A
VGS = 10V
0
50
100
150
200
ID, Drain Current (A)
3.2
3.4
3.6
3.8
4.0
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
Vgs = 10V
3
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AUIRF7732S2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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