參數(shù)資料
型號： AUIRF7669L2TR1
元件分類： JFETs
英文描述： 19 A, 100 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
文件頁數(shù)： 7/11頁
文件大?。?/td> 243K
代理商： AUIRF7669L2TR1
AUIRF7669L2TR/TR1
www.irf.com
5
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Transconductance vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
(t
h)
,G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 250μA
ID = 1.0mA
ID = 1.0A
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
0
50
100
150
200
250
G
fs
,F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 10V
20μs PULSE WIDTH
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 68A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
ra
in
C
ur
re
nt
(A
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VGS = 0V
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