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參數(shù)資料
| 型號： | AUIRFP2907Z |
| 元件分類： | JFETs |
| 英文描述： | 170 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 286K |
| 代理商： | AUIRFP2907Z |
AUIRFP2907Z
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.13mH, RG = 25, IAS = 90A, VGS =10V.
Part not recommended for use above this value.
ISD ≤ 90A, di/dt ≤ 340A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L=0.13mH, RG = 25, IAS = 90A, VGS =10V.
Rθ is measured at TJ of approximately 90°C.
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage75
–––
V
ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.069
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.5
4.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
180
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
180
270
Qgs
Gate-to-Source Charge
–––
46
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
65
–––
td(on)
Turn-On Delay Time
–––19–––
ns
tr
Rise Time
–––
140
–––
td(off)
Turn-Off Delay Time
–––97–––
tf
Fall Time
–––
100
–––
LD
Internal Drain Inductance
–––
5.0
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
13
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
7500
–––
pF
Coss
Output Capacitance
–––
970
–––
Crss
Reverse Transfer Capacitance
–––
510
–––
Coss
Output Capacitance
–––
3640
–––
Coss
Output Capacitance
–––
650
–––
Coss eff.
Effective Output Capacitance
–––
1020
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
90
(Body Diode)
A
ISM
Pulsed Source Current
–––
680
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
41
61
ns
Qrr
Reverse Recovery Charge
–––
59
89
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = VGS, ID = 250A
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 90A f
TJ = 25°C, IF = 90A, VDD = 38V
di/dt = 100A/s
f
TJ = 25°C, IS = 90A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 10V f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 60V, = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 60V
= 1.0MHz, See Fig. 5
RG = 2.5
ID = 90A
VDS = 25V, ID = 90A
VDD = 38V
ID = 90A
VGS = 20V
VGS = -20V
VDS = 60V
VGS = 10V f
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