參數(shù)資料
型號(hào)： AUIRGP35B60PD-E
元件分類： IGBT 晶體管
英文描述： 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/13頁(yè)
文件大小： 395K
代理商： AUIRGP35B60PD-E
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP35B60PD-E
01/11/10
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
HigherReliability
Lead-Free,RoHSCompliant
Automotive Qualified*
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150KHz
Applications
PFC and ZVS SMPS Circuits
DC/DCConverterCharger
1
www.irf.com
PD - 97619
AUTOMOTIVEGRADE
GC
E
Gate
Collector
Emitter
TO-247AD
AUIRGP35B60PD-E
G
C
E
C
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84m
ID (FET equivalent) = 35A
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
60
IC @ TC = 100°C
Continuous Collector Current
34
ICM
Pulse Collector Current (Ref. Fig. C.T.4)
120
ILM
Clamped Inductive Load Current
d
120
A
IF @ TC = 25°C
Diode Continous Forward Current
40
IF @ TC = 100°C
Diode Continous Forward Current
15
IFRM
Maximum Repetitive Forward Current
e
60
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
308
W
PD @ TC = 100°C
Maximum Power Dissipation
123
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbfin (1.1 Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
–––
0.41
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
1.7
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.50
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
Weight
–––
6.0 (0.21)
–––
g (oz)
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參數(shù)描述
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AUIRGP4062D1-E 制造商:International Rectifier 功能描述:AUTOMOTIVE 600V ULTRAFAST COPACK TRENCH IGBT IN A TO-247AC P - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 55A 217W TO247AD 制造商:International Rectifier 功能描述:Automotive 600V Ultra TO-247AC
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AUIRGP4063D 功能描述:IGBT 晶體管 600V CO-PACKAUTO TRENCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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