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參數(shù)資料
| 型號： | AUIRFZ34N |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 263K |
| 代理商： | AUIRFZ34N |
AUIRFZ34N
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410H, RG = 25, IAS = 16A. (See Figure 12)
ISD ≤ 16 A, di/dt ≤ 420A/s, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300s; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.052
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.040
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
6.5
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
34
Qgs
Gate-to-Source Charge
–––
6.8
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
td(on)
Turn-On Delay Time
–––
7.0
–––
tr
Rise Time
–––
49
–––
td(off)
Turn-Off Delay Time
–––
31
–––
ns
tf
Fall Time
–––
40
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
700
–––
Coss
Output Capacitance
–––
240
–––
pF
Crss
Reverse Transfer Capacitance
–––
100
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
29
(Body Diode)
A
ISM
Pulsed Source Current
–––
100
(Body Diode)
VSD
Diode Forward Voltage
–––
1.6
V
trr
Reverse Recovery Time
–––
57
86
ns
Qrr
Reverse Recovery Charge
–––
130
200
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 25V, ID = 16A
ID = 16A
VDS = 44V
VGS = 20V
VGS = -20V
VGS = 10V, See Fig. 6 & 13 f
ID = 16A
RG = 18
TJ = 25°C, IS = 16A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
Conditions
RD = 1.8
, See Fig. 10 f
VGS = 0V
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 16A f
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
MOSFET symbol
VDD = 28V
VDS = 25V
= 1.0MHz, See Fig. 5
TJ = 25°C, IF = 16A
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