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參數(shù)資料
| 型號： | AUIRGP35B60PD-E |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 395K |
| 代理商： | AUIRGP35B60PD-E |
AUIRGP35B60PD-E
2
www.irf.com
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 .
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
Ref.Fig
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
V
VGE = 0V, IC = 500A
V(BR)CES/TJ
Temperature Coeff. of Breakdown Voltage
—0.78
—
V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG
Internal Gate Resistance
—
1.7
—
1MHz, Open Collector
—1.85
2.15
IC = 22A, VGE = 15V
4, 5,6,8,9
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.25
2.55
V
IC = 35A, VGE = 15V
—2.37
2.80
IC = 22A, VGE = 15V, TJ = 125°C
—3.00
3.45
IC = 35A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0
4.0
5.0
V
IC = 250A
7,8,9
VGE(th)/TJ
Threshold Voltage temp. coefficient
—
-10
—
mV/°C VCE = VGE, IC = 1.0mA
gfe
Forward Transconductance
—
36
—
S
VCE = 50V, IC = 22A, PW = 80s
ICES
Collector-to-Emitter Leakage Current
—
3.0
375
A
VGE = 0V, VCE = 600V
—0.35
—
mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage Drop
—
1.30
1.70
V
IF = 15A, VGE = 0V
10
—1.20
1.60
IF = 15A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
—
±100
nA
VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Ref.Fig
Qg
Total Gate Charge (turn-on)
—
160
240
IC = 22A
17
Qgc
Gate-to-Collector Charge (turn-on)
—
55
83
nC VCC = 400V
CT1
Qge
Gate-to-Emitter Charge (turn-on)
—
21
32
VGE = 15V
Eon
Turn-On Switching Loss
—
220
270
IC = 22A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
—
215
265
J
VGE = +15V, RG = 3.3
, L = 200H
Etotal
Total Switching Loss
—
435
535
TJ = 25°C f
td(on)
Turn-On delay time
—
26
34
IC = 22A, VCC = 390V
CT3
tr
Rise time
—
6.0
8.0
ns
VGE = +15V, RG = 3.3, L = 200H
td(off)
Turn-Off delay time
—
110
122
TJ = 25°C f
tf
Fall time
—
8.0
10
Eon
Turn-On Switching Loss
—
410
465
IC = 22A, VCC = 390V
CT3
Eoff
Turn-Off Switching Loss
—
330
405
J
VGE = +15V, RG = 3.3
, L = 200H
11,13
Etotal
Total Switching Loss
—
740
870
TJ = 125°C f
WF1,WF2
td(on)
Turn-On delay time
—
26
34
IC = 22A, VCC = 390V
CT3
tr
Rise time
—
8.0
11
ns
VGE = +15V, RG = 3.3, L = 200H
12,14
td(off)
Turn-Off delay time
—
130
150
TJ = 125°Cf
WF1,WF2
tf
Fall time
—
12
16
Cies
Input Capacitance
—
3715
—
VGE = 0V
16
Coes
Output Capacitance
—
265
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
47
—
pF
f = 1Mhz
Coes eff.
Effective Output Capacitance (Time Related)
g
—135
—
VGE = 0V, VCE = 0V to 480V
15
Coes eff. (ER) Effective Output Capacitance (Energy Related) g
—179
—
TJ = 150°C, IC = 120A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22
, VGE = +15V to 0V
trr
Diode Reverse Recovery Time
—
42
60
ns
TJ = 25°C
IF = 15A, VR = 200V,
19
—74
120
TJ = 125°C
di/dt = 200A/s
Qrr
Diode Reverse Recovery Charge
—
80
180
nC TJ = 25°C
IF = 15A, VR = 200V,
21
—
220
600
TJ = 125°C
di/dt = 200A/s
Irr
Peak Reverse Recovery Current
—
4.0
6.0
A
TJ = 25°C
IF = 15A, VR = 200V,
19,20,21,22
—6.5
10
TJ = 125°C
di/dt = 200A/s
CT5
Conditions
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