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參數(shù)資料
| 型號： | AWT6302M9Q7 |
| 廠商： | ANADIGICS INC |
| 元件分類： | 放大器 |
| 英文描述： | 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, 1.10 MM HEIGHT, MINIATURE, M9, 8 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 277K |
| 代理商： | AWT6302M9Q7 |
10/2004
AWT6302
PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
M9 Package
8 Pin 3 mm x 3 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
6
GND at slug (pad)
3
4
2
VCC
GND
advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
3 mm x 3 mm x 1.1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
system.
FEATURES
InGaP HBT Technology
High Efficiency: 39%
Low Quiescent Current: 48 mA
Low Leakage Current in Shutdown Mode: <1
A
VREF = +2.85 V (+2.75 V min over temp)
Optimized for a 50
System
Low Profile Miniature Surface Mount Package:
1.1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
APPLICATIONS
PCS CDMA Wireless Handsets
Dual Band CDMA Wireless Handsets
PRODUCT DESCRIPTION
The AWT6302 meets the increasing demands for
higher efficiency and linearity in CDMA 1X handsets,
while reducing pcb area by 44%. The package
pinout
was
chosen
to
enable
handset
manufacturers to switch from a 4 mm x 4 mm PA
module with very few layout changes to the phone
board. The PA module is optimized for VREF = +2.85 V, a
requirement for compatibility with the Qualcomm
6000 chipset. The device is manufactured on an
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