參數(shù)資料
型號(hào): BD792
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝: PLASTIC, FORMERLY TO-126, 3 PIN
文件頁數(shù): 1/61頁
文件大?。?/td> 372K
代理商: BD792
3–198
Motorola Bipolar Power Transistor Device Data
Complementary Plastic Silicon
Power Transistors
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 80 Vdc (Min) — BD789, BD790
VCEO(sus) = 100 Vdc (Min) — BD791, BD792
High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
*MAXIMUM RATINGS
Rating
Symbol
BD789
BD790
BD791
BD792
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
— Peak
IC
4.0
8.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ,Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
8.34
_C/W
16
12
0
20
40
60
100
120
140
160
Figure 1. Power Derating
T, TEMPERATURE (
°C)
80
4.0
8.0
1.6
1.2
0
0.4
0.8
T
A
T
C
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BD789
BD791
BD790
BD792
*Motorola Preferred Device
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
15 WATTS
*
CASE 77–08
TO–225AA TYPE
NPN
PNP
REV 7
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