參數(shù)資料
型號(hào): BD792
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
封裝: PLASTIC, FORMERLY TO-126, 3 PIN
文件頁(yè)數(shù): 12/61頁(yè)
文件大?。?/td> 372K
代理商: BD792
BD789 BD791 BD790 BD792
3–199
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
BD789, BD790
BD791, BD792
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
BD789, BD790
(VCE = 50 Vdc, IB = 0)
BD791, BD792
ICEO
100
Adc
Collector Cutoff Current
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
BD789, BD790
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
BD791, BD792
(VCE = 40 Vdc, VBE(off) = 1 5 Vdc, TC = 125_C)
BD789, BD790
(VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
BD791, BD792
ICEX
1.0
0.1
Adc
mAdc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
1.0
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 200 mAdc, VCE = 3 0 Vdc)
(IC = 1.0 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
40
20
10
5.0
250
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 4.0 Adc, IB = 800 mAdc)
VCE(sat)
0.5
1.0
2.5
3.0
Vdc
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc)
VBE(sat)
1.8
Vdc
Base–Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc)
VBE(on)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
40
MHz
Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 0.1 MHz)
BD789, BD791
BD790, BD792
Cob
50
70
pF
Small–Signal Current Gain
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
10
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
500
0.04
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,TIME
(ns)
70
30
20
5.0
0.06
0.2
0.4
0.6
td @ VBE(off) = 5.0 V
TJ = 25°C
VCC = 30 V
IC/IB = 10
+ 11 V
0
+ 30 V
SCOPE
RB
– 4 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
tr
7.0
10
1.0
4.0
D1 MUST BE FAST RECOVERY TYPE, eg
MBR340 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
25
s
– 9.0 V
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
BD789, 791 (NPN)
BD790, 792 (PNP)
300
200
100
50
0.1
2.0
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