- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378412 > BF909 (NXP Semiconductors N.V.) N-channel dual-gate MOSFET PDF資料下載
參數(shù)資料
| 型號： | BF909 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF909<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF909<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 20 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 320K |
| 代理商： | BF909 |
NXP
Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF909; BF909R
FEATURES
Specially designed for use at 5 V supply voltage
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
BF909 marking code:
%M3
.
handbook, halfpage
4
3
2
1
Top view
MAM124
s,b
d
g1
g2
Fig.2 Simplified outline (SOT143R) and symbol.
BF909R marking code:
%M4
.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g1
g2
3
4
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
y
fs
C
ig1-s
C
rs
F
drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
36
43
3.6
35
2
7
40
200
150
50
4.3
50
2.8
V
mA
mW
°
C
mS
pF
fF
dB
f = 1 MHz
f = 800 MHz
Rev. 02 - 19 November 2007
2 of 12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF909R | N-channel dual-gate MOSFET |
| BF909R | N-channel dual-gate MOSFET |
| BF991 | N-channel dual-gate MOSFET |
| BF991 | N-channel dual-gate MOSFET |
| BF992 | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF909 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909,215 | 功能描述:射頻MOSFET小信號晶體管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909,235 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 7V 40mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF909/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Dual Gate MOS-FETs |
| BF909/WR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Dual Gate MOS-FETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。