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參數(shù)資料
| 型號： | BF998 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 20 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 279K |
| 代理商： | BF998 |
1996 Aug 01
2
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1
Simplified outline (SOT143B)
and symbol; BF998.
Marking code:
MOp.
handbook, halfpage
s,b
d
g1
g2
4
3
2
1
Top view
MAM039
handbook, halfpage
s,b
d
g1
g2
MAM040
3
4
1
2
Top view
Fig.2
Simplified outline (SOT143R)
and symbol; BF998R.
Marking code:
MOp.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-s
C
rs
F
T
j
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
24
2.1
25
1
12
30
200
150
V
mA
mW
mS
pF
fF
dB
C
f = 1 MHz
f = 800 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998 | N-channel dual-gate MOSFET |
| BF998R | N-channel dual-gate MOSFET |
| BF998R | N-channel dual-gate MOSFET |
| BFG135 | NPN 7 GHz wideband transistor |
| BFG135 | NPN 7 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998 T/R | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R |
| BF998,215 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF998,215-CUT TAPE | 制造商:NXP 功能描述:BF998 Series 12 V 30 mA N-channel Dual-gate MOS-FET - SOT143B |
| BF998,235 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 12V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF998 | 制造商:Vishay Siliconix 功能描述:MOSFET N RF DUAL-GATE SOT-143 |
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