參數(shù)資料
型號: BF998
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: N-channel dual-gate MOSFET
封裝: BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 20
文件頁數(shù): 8/15頁
文件大小: 279K
代理商: BF998
1996 Aug 01
8
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
handbook, full pagewidth
MGE802
330 k
Ω
1.8 k
Ω
360
Ω
100 k
Ω
140 k
Ω
1 nF
1 nF
47
μ
F
20
μ
H
1 nF
10 pF
D2
BB405
330 k
Ω
1 nF
1 nF
Vtun
output
50
Ω
output
C1
5.5 pF
50
Ω
input
VDD
VDD
Vagc
47 k
Ω
1 nF
1 nF
1 nF
L2
L1
1 nF
15 pF
D1
BB405
Vtun
input
V
DD
= 12 V; G
S
= 2 mS; G
L
= 0.5 mS.
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust G
L
= 0.5 mS. C1 adjusted for G
S
= 2 mS.
Fig.17 Gain control test circuit at f = 200 MHz.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF998 T/R 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R
BF998,215 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998,215-CUT TAPE 制造商:NXP 功能描述:BF998 Series 12 V 30 mA N-channel Dual-gate MOS-FET - SOT143B
BF998,235 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 12V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF998 制造商:Vishay Siliconix 功能描述:MOSFET N RF DUAL-GATE SOT-143