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參數(shù)資料
| 型號： | BF998 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BF998<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 20 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 279K |
| 代理商： | BF998 |
1996 Aug 01
4
NXP Semiconductors
Product specification
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on a ceramic substrate, 8 mm
10 mm
0.7 mm.
Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Note
1.
Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
DS
= 8 V; V
G2-S
= 4 V; I
D
= 10 mA.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air; BF998
note 1
note 2
460
500
500
K/W
K/W
K/W
R
th j-a
thermal resistance from junction to ambient in free air; BF998R note 1
SYMBOL
V
(BR)G1-SS
V
(BR)G2-SS
V
(P)G1-S
V
(P)G2-S
I
DSS
I
G1-SS
I
G2-SS
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
V
G2-S
= V
DS
= 0; I
G1-SS
=
10 mA
V
G1-S
= V
DS
= 0; I
G2-SS
=
10 mA
V
G2-S
= 4 V; V
DS
= 8 V; I
D
= 20
A
V
G1-S
= 0; V
DS
= 8 V; I
D
= 20
A
V
G2-S
= 4 V; V
DS
= 8 V; V
G1-S
= 0; note 1
V
G2-S
= V
DS
= 0; V
G1-S
=
5 V
V
G1-S
= V
DS
= 0; V
G2-S
=
5 V
6
6
2
20
20
2.0
1.5
18
50
50
V
V
V
V
mA
nA
nA
SYMBOL
y
fs
C
ig1-s
C
ig2-s
C
os
C
rs
F
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
2.5
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
noise figure
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
Sopt
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
Sopt
21
24
2.1
1.2
1.05
25
0.6
1.0
mS
pF
pF
pF
fF
dB
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF998 | N-channel dual-gate MOSFET |
| BF998R | N-channel dual-gate MOSFET |
| BF998R | N-channel dual-gate MOSFET |
| BFG135 | NPN 7 GHz wideband transistor |
| BFG135 | NPN 7 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF998 T/R | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143B T/R |
| BF998,215 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 12V VHF/UHF RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF998,215-CUT TAPE | 制造商:NXP 功能描述:BF998 Series 12 V 30 mA N-channel Dual-gate MOS-FET - SOT143B |
| BF998,235 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 12V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF998 | 制造商:Vishay Siliconix 功能描述:MOSFET N RF DUAL-GATE SOT-143 |
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