參數(shù)資料
型號(hào): BFG198
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: NPN 8 GHz wideband transistor
封裝: BFG198<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,;
文件頁數(shù): 3/14頁
文件大?。?/td> 293K
代理商: BFG198
1995 Sep 12
3
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2.
d
im
=
60 dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
60 dB;
V
q
= V
o
6 dB; f
p
= 445.25 MHz;
V
r
= V
o
6 dB; f
q
= 453.25 MHz; f
r
= 455.25 MHz
measured at f
(p+q
r)
= 443.25 MHz.
d
im
=
60 dB (DIN 45004B); I
C
= 70 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
I
C
= 50 mA; V
CE
= 8 V; V
o
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
3.
4.
SYMBOL
PARAMETER
CONDITIONS
VALU
E
UNIT
R
th j-s
thermal resistance from junction to soldering point
up to T
s
= 135
C (note 1)
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 5 V
I
C
= 50 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 50 mA; V
CE
= 8 V; f = 500 MHz;
T
amb
= 25
C
I
C
= 50 mA; V
CE
= 8 V; f = 800 MHz;
T
amb
= 25
C
note 2
note 3
note 4
40
90
1.5
4
0.8
8
100
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power
gain; note 1
18
dB
15
dB
V
o
output voltage
750
700
55
mV
mV
dB
d
2
second order
intermodulation distortion
G
UM
10
s
1
1
s
112
s
222
-------------------------------------------------------- dB.
log
=
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