參數(shù)資料
型號(hào)： BFG410
廠商： NXP Semiconductors N.V.
英文描述： NPN 22 GHz wideband transistor
中文描述： npn型22 GHz的寬帶晶體管
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 104K
代理商： BFG410
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
Fig.1 Simplified outline SOT343R.
Marking code:
P4.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
TYP.
10
80
45
22
21
1.2
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
open emitter
open base
10
4.5
12
54
120
V
V
mA
mW
T
s
≤
110
°
C
I
C
= 10 mA; V
CE
= 2 V; T
j
= 25
°
C
I
C
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
I
C
= 1 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
fF
GHz
dB
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
相關(guān)PDF資料
PDF描述
BFG505W ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFG410W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 22 GHz wideband transistor
BFG410W,115 功能描述:射頻雙極小信號(hào)晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG410W,115-CUT TAPE 制造商:NXP 功能描述:BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R
BFG410W,135 功能描述:射頻雙極小信號(hào)晶體管 Single NPN 4.5V 10mA 54mW 50 22GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG424F 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 25 GHz wideband transistor
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