參數(shù)資料
型號： BLF4G20S-110B
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 10/14頁
文件大?。?/td> 121K
代理商： BLF4G20S-110B
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
5 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
VDS = 28 V; IDq = 650 mA; Tcase =25 °C;
f = 1990 MHz
VDS =28V; IDq = 650 mA; Tcase =25 °C;
f = 1990 MHz
Fig 1.
One-tone CW power gain and drain efciency
as functions of load power; typical values
Fig 2.
Two-tone CW power gain and drain efciency
as functions of average load power; typical
values
VDS = 28 V; IDq = 650 mA; Tcase =25 °C;
f = 1990 MHz
VDS =28V; Tcase =25 °C; f = 1990 MHz
(1) IDq = 550 mA
(2) IDq = 650 mA
(3) IDq = 750 mA
(4) IDq = 850 mA
Fig 3.
Intermodulation distortion as a function of
average load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
PL (W)
0
160
120
40
80
001aac387
11
20
40
60
0
13
15
Gp
(dB)
Gp
ηD
(%)
ηD
9
PL(AV) (W)
0
100
80
40
60
20
001aac388
12
13
11
14
15
Gp
(dB)
10
Gp
ηD
0
ηD
(%)
50
40
30
20
10
PL(AV) (W)
0
100
80
40
60
20
001aac389
40
60
20
0
IMD
(dBc)
IMD3
IMD5
IMD7
80
PL(AV) (W)
0
100
80
40
60
20
001aac390
-40
-60
-20
0
IMD3
(dBc)
-80
1
2
3
4
相關(guān)PDF資料
PDF描述
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20S-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22-100 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-100,112 制造商:NXP Semiconductors 功能描述:
BLF4G22-130 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-45,112 制造商:NXP Semiconductors 功能描述:
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