參數(shù)資料
型號： BLF4G20S-110B
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 2/14頁
文件大?。?/td> 121K
代理商： BLF4G20S-110B
9397 750 14611
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
10 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
Fig 12. Package outline SOT502B
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT502B
99-12-28
03-01-10
0
5
10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
A
F
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M
w2
UNIT
A
mm
D
b
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
c
U2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE1
9.50
9.30
inches
0.505
0.495
0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135
0.010
0.045
0.035
0.815
0.805
0.210
0.170
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
相關(guān)PDF資料
PDF描述
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20S-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G22-100 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-100,112 制造商:NXP Semiconductors 功能描述:
BLF4G22-130 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G22-45,112 制造商:NXP Semiconductors 功能描述:
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