| 型號(hào) | 廠商 | 描述 |
| bla31ag102sn4 2 3 4 |
MURATA MANUFACTURING CO LTD | 4 FUNCTIONS, 0.05 A, FERRITE CHIP |
| bla31ag121sn4 2 3 4 |
MURATA MANUFACTURING CO LTD | 4 FUNCTIONS, 0.15 A, FERRITE CHIP |
| bla31ag221sn4 2 3 4 |
MURATA MANUFACTURING CO LTD | 4 FUNCTIONS, 0.15 A, FERRITE CHIP |
| bla31ag300sn4 2 3 4 |
MURATA MANUFACTURING CO LTD | 4 FUNCTIONS, 0.2 A, FERRITE CHIP |
| blf3g22-30 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB |
| blf4g10-160 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB |
| blf4g10ls-160 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB |
| blf4g20-110b 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB |
| blf4g20s-110b 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB |
| blf4g20ls-130 2 3 4 5 6 7 8 9 10 11 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB |
| blf4g22-100 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
| blf4g22s-100 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
| blf4g22-130 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB |
| blf4g22ls-130 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB |
| blf6g10ls-200r 2 3 4 5 6 7 8 9 10 |
NXP SEMICONDUCTORS | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| blf6g10ls-200 2 3 4 5 6 7 8 9 10 11 |
NXP SEMICONDUCTORS | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| blf872 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
NXP SEMICONDUCTORS | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| blh2-21-35pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-21-39pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-23-21pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-23-97pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-11pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-24pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-4pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-11-3pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-11-98pd-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-23-55pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-23-99pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-23-99pb-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-11pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-11pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-19pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-19pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-20pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-35pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-43pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-43pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-46pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-46pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-4pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-61pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-25-61pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-9-35pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-9-98pb-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-11-98pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-11-99pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-13-98pn-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-15-19pa-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-17-26pc-1 |
MIL SERIES CONNECTOR, RECEPTACLE | |
| blh2-17-2pk-1 |
MIL SERIES CONNECTOR, RECEPTACLE |