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參數(shù)資料
| 型號(hào)： | BLV950 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262A2, 5 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 109K |
| 代理商： | BLV950 |
1997 Oct 27
3
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Total device; both sections equally loaded; thermal resistance is determined under specified RF operating
conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation (DC)
storage temperature
operating junction temperature
open emitter
open base
open collector
65
70
30
3
12
12
340
+150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
P
tot
= 340 W; T
mb
= 25
°
C; note 1
0.52
K/W
R
th mb-h
0.15
K/W
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