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參數(shù)資料
| 型號： | BLV950 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262A2, 5 PIN |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV950 |
1997 Oct 27
4
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured under pulse conditions: t
p
≤
300
μ
s;
δ ≤
0.01.
Value C
c
is that of the die only, it is not measurable because of internal matching network.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 60 mA
open base; I
C
= 150 mA
open collector; I
E
= 3 mA
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 4.5 A; note 1
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 2
70
30
3
30
75
5
120
V
V
V
mA
pF
Fig.2
DC current gain as a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
300
μ
s;
δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
handbook, halfpage
0
40
60
20
0
4
8
12
16
hFE
IC(A)
MLD256
(2)
(1)
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
200
100
0
10
20
30
50
40
Cc
(pF)
CB
MLD257
Value C
is that of the die only, it is not measurable because of
internal matching network.
I
E
= i
e
= 0; f = 1 MHz.
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