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參數(shù)資料
| 型號： | BLV950 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262A2, 5 PIN |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV950 |
1997 Oct 27
6
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
Fig.6
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; f
1
= 960.0 MHz; f
2
= 960.1 MHz.
handbook, halfpage
0
50
100
150
P L
200
0
MLD260
8
60
40
20
0
4
(%)
Gp
(dB)
Gp
η
C
η
C
Fig.7
Load power as a function of input power;
typical values.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; f
1
= 960.0 MHz; f
2
= 960.1 MHz.
handbook, halfpage
(PEP)
(W)
0
10
20
30
50
0
100
150
MLD261
Pi (PEP) (W)
Fig.8
Intermodulation distortion as a function of
load power; typical values.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; f
1
= 960.0 MHz; f
2
= 960.1 MHz.
handbook, halfpage
dim
(dBc)
0
50
30
40
45
35
MLD262
100
150
PL
200
d3
d5
d7
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| BLV958 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistors |
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