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參數(shù)資料
| 型號(hào)： | BR211SM |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Breakover diodes |
| 中文描述： | 擊穿二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | BR211SM |
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
TM
On-state voltage
V
(BR)
Avalanche voltage (min)
V
(BO)
Breakover voltage (max)
CONDITIONS
I
TM
= 2 A
I
(BR)
= 10
I
I
, t
= 100
μ
s
BR211SM-140
BR211SM-160
BR211SM-180
BR211SM-200
BR211SM-220
BR211SM-240
BR211SM-260
BR211SM-280
MIN.
-
TYP.
-
MAX.
2.5
UNIT
V
1
123
140
158
176
193
211
228
246
-
150
100
10
-
140
160
180
200
220
240
260
280
+0.1
-
-
200
-
157
180
202
224
247
269
292
314
-
-
-
1000
10
V
V
V
V
V
V
V
V
S
2
I
H
Temperature coefficient of V
(BR)
Holding current
%/K
mA
mA
mA
μ
A
T
j
= 25C
T
= 70C
t
p
= 100
μ
s
V
D
= 85% V
(BR)min
, T
j
= 70C
I
S
I
D
3
4
Switching current
Off-state current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
dV
D
/dt
Linear rate of rise of off-state
voltage that will not trigger any
device
C
j
Off-state capacitance
CONDITIONS
V
(DM)
= 85% V
(BR)min
; T
j
= 70 C
MIN.
-
TYP.
-
MAX.
2000
UNIT
V/
μ
s
V
D
= 0 V; f = 1 kHz to 1 MHz
-
-
100
pF
Fig.1. Definition of breakover diode characteristics
Fig.2. Test waveform for high voltage impulse (I
TSM1
)
according to CCITT vol IX-Rec K17.
VT
IT
IH
V(BO)
IS
ID
VD
current
voltage
Symbol
V(BR)
I(BR)
Symmetric BOD
100%
90%
50%
30%
ITSM
10us
700us
time
current
0
1
Measured under pulsed conditions to avoid excessive dissipation
2
The minimum current at which the diode will remain in the on-state
3
The avalanche current required to switch the diode to the on-state
4
Measured at maximum recommended continuous voltage. Relative humidity < 65%.
August 1996
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR211SM-140 | Breakover diodes |
| BR211SM-160 | MOSFET N-CH 500V 8A TO-220 |
| BR211SM-180 | Breakover diodes |
| BR211SM-200 | Breakover diodes |
| BR211SM-220 | Breakover diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR211SM-140 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes |
| BR211SM-160 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes |
| BR211SM-180 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes |
| BR211SM-200 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes |
| BR211SM-220 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes |
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