參數(shù)資料
型號: BR211SM
廠商: NXP Semiconductors N.V.
英文描述: Breakover diodes
中文描述: 擊穿二極管
文件頁數(shù): 4/6頁
文件大?。?/td> 32K
代理商: BR211SM
Philips Semiconductors
Preliminary specification
Breakover diodes
BR211SM series
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; T
j
= 25C.
Fig.10. Transient thermal impedance. Z
th
j-a
= f(t
p
).
VD / V
1
10
100
1000
1
10
100Cj / pF
BR211-280
BR211-140
typ
t
p
P
D
t
Zth / (K/W)
0.1
10us
1
10
100
1000
1ms
0.1s
tp / s
10s
1000s
BR211
August 1996
4
Rev 1.100
相關(guān)PDF資料
PDF描述
BR211SM-140 Breakover diodes
BR211SM-160 MOSFET N-CH 500V 8A TO-220
BR211SM-180 Breakover diodes
BR211SM-200 Breakover diodes
BR211SM-220 Breakover diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BR211SM-140 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes
BR211SM-160 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes
BR211SM-180 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes
BR211SM-200 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes
BR211SM-220 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Breakover diodes