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參數(shù)資料
| 型號(hào)： | BRS212-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管&整流器 |
| 英文描述： | Breakover diodes |
| 中文描述： | 224 V, SYMMETRICAL BOD |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 32K |
| 代理商： | BRS212-200 |
Philips Semiconductors
Product specification
Breakover diodes
BRS212 series
Fig.1. Definition of breakover diode characteristics
Fig.2. Test waveform for high voltage impulse (I
PP
)
according to CCITT vol IX-Rec K17.
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; T
j
= 70C
prior to surge.
Fig.4. Normalised avalanche breakdown voltage V
(BR)
and V
(BO)
as a function of temperature.
Fig.5. On-state current as a function of on-state
voltage; t
p
= 200
μ
s to avoid excessive dissipation.
Fig.6. Maximum off-state current as a function of
temperature.
VT
IT
IH
V(BO)
IS
ID
VD
current
voltage
Symbol
V(BR)
I(BR)
Symmetric BOD
-40
-20
0
20
Tj / C
40
60
80
100
V(BR)(Tj)
V(BR)(25 C)
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
100%
90%
50%
30%
I
5us
310us
time
current
0
PP
1
2
3
4
0
5
10
15
20
Tj = 25 C
Tj = 150 C
IT / A
VT / V
typ
max
1
10
100
1000
10000
0
5
10
15
20
BR211
Number of impulses
ITSM / A
I
ITSM
time
-40
-20
0
20
Tj / C
40
60
80
100
ID / uA
0.1
1
10
100
max
January 1997
3
Rev 1.000
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